Samsung announced a 128GB 3-bit NAND-based flash storage module for mass-market devices. The 128GB storage solution is built using the more prevalent Embedded MultiMediaCard (eMMC) 5.0 technology.
However this news doesn’t mean that Samsung’s latest flash has any performance issues. The South Korean company is claiming sequential read figures of 260 megabytes per second (MB/s), same as that of newer flash modules based on eMMC 5.1 technology.
With random data read and write operations of up to 6,000 IOPS (input/output operations per second) and 5,000 IOPS respectively, the 128GB module is “four and 10 times faster, respectively, than those of a typical external memory card.”
There is yet no information of what device the new 128GB storage module will be in, but it is likely that we’ll see a mid-range Samsung smartphone with 128 gigs of internal memory sometime later this year.